18526395. SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Charles Chew-Yuen Young of Cupertino CA (US)

Chih-Liang Chen of Hsinchu City (TW)

Chih-Ming Lai of Hsinchu City (TW)

Jiann-Tyng Tzeng of Hsinchu City (TW)

Shun-Li Chen of Tainan City (TW)

Kam-Tou Sio of Hsinchu County (TW)

Shih-Wei Peng of Hsinchu City (TW)

Chun-Kuang Chen of Hsinchu County (TW)

Ru-Gun Liu of Hsinchu County (TW)

SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526395 titled 'SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK

Simplified Explanation

The semiconductor structure described in the abstract includes a first gate structure, a second gate structure, and at least one local interconnect that extends continuously across a non-active region from a first active region to a second active region. Additionally, the structure includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer, isolated from each other, and apart from the first separation spacer by different distances.

• First gate structure, second gate structure, and local interconnect are key components of the semiconductor structure.
• The first separation spacer and first vias play a crucial role in the structure's design and functionality.

Potential Applications

The technology described in this patent application could be applied in:

• Advanced semiconductor devices
• Integrated circuits
• High-performance computing systems

Problems Solved

This technology addresses the following issues:

• Efficient routing of signals across different active regions
• Improved isolation and spacing of vias for enhanced performance

Benefits

The benefits of this technology include:

• Enhanced signal transmission efficiency
• Increased performance and reliability of semiconductor devices
• Better utilization of space on the semiconductor structure

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor manufacturing industry
• Electronics and telecommunications sector
• Research and development of cutting-edge technologies

Possible Prior Art

One possible prior art for this technology could be:

• Previous semiconductor structures with similar gate and interconnect configurations

How does this technology improve signal transmission efficiency?

This technology improves signal transmission efficiency by optimizing the placement and spacing of vias, reducing signal interference, and enhancing overall signal integrity.

What are the specific benefits of using a first separation spacer in the semiconductor structure?

The first separation spacer helps in isolating and spacing the vias effectively, reducing crosstalk and improving the overall performance of the semiconductor structure.

Original Abstract Submitted

A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.