Taiwan semiconductor manufacturing co., ltd. (20240096996). SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Huan-Chieh Su of Changhua County (TW)

Chun-Yuan Chen of Hsinchu (TW)

Li-Zhen Yu of New Taipei City (TW)

Lo-Heng Chang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096996 titled 'SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a complex structure involving multiple dielectric layers, semiconductor layers, gate structures, and fin structures. Here is a simplified explanation of the abstract:

• The semiconductor device consists of a stack of semiconductor layers on a dielectric layer.
• Gate structures wrap around each semiconductor layer and extend lengthwise.
• Dielectric fin structures and isolation structures are embedded in the gate structure on opposite sides of the semiconductor layers.
• The dielectric fin structure is narrower than the isolation structure.
• The isolation structure includes multiple dielectric layers extending through the gate and first dielectric layers.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Advanced semiconductor devices
• High-performance electronic components
• Nanotechnology research

Problems Solved

This technology addresses the following issues:

• Enhanced performance and efficiency of semiconductor devices
• Improved integration of complex structures in electronic components
• Increased reliability and durability of electronic devices

Benefits

The benefits of this technology include:

• Higher speed and performance in electronic devices
• Greater miniaturization and integration capabilities
• Improved energy efficiency and power consumption

Potential Commercial Applications

The potential commercial applications of this technology could include:

• Semiconductor manufacturing companies
• Electronics and consumer electronics industries
• Research institutions and laboratories

Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor structures with embedded dielectric layers and gate structures. Research in the field of nanotechnology and semiconductor devices may have explored similar concepts in the past.

Unanswered Questions

How does this technology compare to existing semiconductor structures in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor structures to evaluate the advantages and limitations of this new technology.

What are the specific manufacturing processes involved in creating this complex semiconductor device?

The article does not delve into the detailed manufacturing processes or techniques used to fabricate the semiconductor device described in the patent application.

Original Abstract Submitted

a semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. the dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. the isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.