Samsung electronics co., ltd. (20240136426). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Seungheon Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136426 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device involving the formation of a mask layer on a semiconductor structure with gate lines and intergate insulating portions. This method includes the formation of an opening to expose a cut region of the gate lines, the creation of a separation hole by removing part of a gate capping layer, the formation of a pyrolysis material pattern in the separation hole, and the removal of a portion of the gate electrode using an etch stop layer.
- Formation of a mask layer on a semiconductor structure with gate lines and intergate insulating portions
- Creation of an opening to expose a cut region of the gate lines
- Formation of a separation hole by removing part of a gate capping layer
- Creation of a pyrolysis material pattern in the separation hole
- Application of an etch stop layer on the mask layer and the separation hole's side wall
- Removal of a portion of the gate electrode using the etch stop layer
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices with precise control over gate electrode structures.
Problems Solved
This method helps in improving the accuracy and efficiency of semiconductor device manufacturing processes by enabling the precise removal of gate electrode material.
Benefits
The use of this method can lead to enhanced performance and reliability of semiconductor devices through the creation of well-defined gate electrode structures.
Potential Commercial Applications
This technology can find applications in the production of high-performance integrated circuits and microprocessors for various electronic devices.
Possible Prior Art
One possible prior art could be the use of similar etch stop layers in semiconductor manufacturing processes to control material removal during device fabrication.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing techniques?
This article does not provide a direct comparison between this method and traditional techniques in semiconductor manufacturing.
What are the specific materials used in the formation of the pyrolysis material pattern?
The abstract does not detail the specific materials utilized in creating the pyrolysis material pattern.
Original Abstract Submitted
a method of manufacturing a semiconductor device, includes forming a mask layer on a semiconductor structure having a plurality of gate lines and a plurality of intergate insulating portions, forming an opening that exposes a cut region of the plurality of gate lines in the mask layer, forming a separation hole by removing a portion of a gate capping layer exposed by the opening, forming a pyrolysis material pattern in the separation hole, forming an etch stop layer on an upper surface of the mask layer and on a side wall portion of the separation hole from which the pyrolysis material pattern is removed, while the pyrolysis material pattern is decomposed and removed, and removing a portion of the gate electrode exposed by the separation hole using the etch stop layer.
