US Patent Application 18349486. INPUT/OUTPUT DEVICES simplified abstract
Contents
INPUT/OUTPUT DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sung-Hsin Yang of Hsinchu (TW)
Jung-Chi Jeng of Tainan City (TW)
Ru-Shang Hsiao of Hsinchu County (TW)
INPUT/OUTPUT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18349486 titled 'INPUT/OUTPUT DEVICES
Simplified Explanation
The patent application describes a semiconductor device with two transistors in different areas.
- The first transistor has a gate structure and three gate spacers made of different materials.
- The second transistor also has a gate structure and two of the gate spacers made of different materials.
- The third gate spacer is directly on top of the first gate spacer in the second area.
Original Abstract Submitted
Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a first transistor in a first area and a second transistor in a second area. The first transistor includes a first gate structure extending lengthwise along a first direction, and a first gate spacer, a second gate spacer, and a third gate spacer over sidewalls of the first gate structure. The second transistor includes a second gate structure extending lengthwise along the first direction, and the first gate spacer and the third gate spacer over sidewalls of the second gate structure. The first gate spacer, the second gate spacer and the third gate spacer are of different compositions and the third gate spacer is directly on the first gate spacer in the second area.
