18526397. TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Po-Kang Ho of Taoyuan City (TW)
Tsai-Yu Huang of Taoyuan City (TW)
Huicheng Chang of Tainan City (TW)
TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526397 titled 'TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a device with multiple semiconductor fins and isolation regions, designed to optimize performance and efficiency in electronic devices.
- The device includes a first semiconductor fin and a second semiconductor fin extending from a substrate, with a hybrid fin over the substrate.
- The second semiconductor fin is positioned between the first semiconductor fin and the hybrid fin, with isolation regions separating them.
- The top surface of the second isolation region is further from the substrate than the top surface of the first isolation region.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance processors, memory chips, and other integrated circuits.
Problems Solved
This innovation helps to improve the performance and efficiency of electronic devices by optimizing the layout and design of semiconductor fins and isolation regions.
Benefits
The device offers enhanced functionality, speed, and power efficiency, making it ideal for use in a wide range of electronic applications.
Potential Commercial Applications
With its potential to enhance the performance of electronic devices, this technology could find commercial applications in industries such as consumer electronics, telecommunications, and computing.
Possible Prior Art
Prior art in the field of semiconductor device design may include similar technologies aimed at improving the performance and efficiency of electronic components.
Unanswered Questions
How does this technology compare to existing semiconductor fin designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor fin designs to evaluate the advantages and disadvantages of this new technology.
What specific electronic devices or applications would benefit the most from this technology?
The potential applications of this technology are mentioned broadly, but a more detailed analysis of specific devices or industries that could benefit the most would provide valuable insights.
Original Abstract Submitted
In an embodiment, a device includes: a first semiconductor fin extending from a substrate; a second semiconductor fin extending from the substrate; a hybrid fin over the substrate, the second semiconductor fin disposed between the first semiconductor fin and the hybrid fin; a first isolation region between the first semiconductor fin and the second semiconductor fin; and a second isolation region between the second semiconductor fin and the hybrid fin, a top surface of the second isolation region disposed further from the substrate than a top surface of the first isolation region.
