International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE

Organization Name

international business machines corporation

Inventor(s)

Shahab Siddiqui of Clifton Park NY (US)

Ruqiang Bao of Niskayuna NY (US)

Charlotte DeWan Adams of Schenectady NY (US)

Curtis S. Durfee of Schenectady NY (US)

Anthony I. Chou of Guilderland NY (US)

Barry Paul Linder of Hastings-on-Hudson NY (US)

Ravikumar Ramachandran of Pleasantville NY (US)

Dechao Guo of Niskayuna NY (US)

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105769 titled 'STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a substrate with two regions separated by a space. The first region houses a FinFET-based input/output device, while the second region contains a nanosheet-based logic device.

• The semiconductor device consists of a substrate with distinct regions for different types of semiconductor devices.
• The first region accommodates a FinFET-based input/output device with a gate dielectric.
• The second region hosts a nanosheet-based logic device without a gate dielectric.

Potential Applications

This technology can be applied in:

• High-performance computing
• Mobile devices
• Internet of Things (IoT) devices

Problems Solved

• Integration of different types of semiconductor devices on a single substrate
• Enhanced performance and efficiency in electronic devices

Benefits

• Improved functionality and performance
• Space-saving design
• Increased energy efficiency

Potential Commercial Applications

1. 1. 1. Enhancing Electronic Devices with FinFET and Nanosheet Technologies ###

Possible Prior Art

No known prior art at this time.

Unanswered Questions

How does the integration of FinFET and nanosheet devices impact overall device performance?

The abstract does not provide specific details on the performance implications of combining these two types of semiconductor devices.

What are the manufacturing challenges associated with creating a semiconductor device with FinFET and nanosheet technologies on the same substrate?

The abstract does not address the potential difficulties or complexities in the manufacturing process of such a semiconductor device.

Original Abstract Submitted

a semiconductor device includes a substrate having a first region and a second region separated from the first region by distance to define a space therebetween. a first semiconductor device including a gate dielectric is on the first region. the first semiconductor device can implement a finfet-based input/output (i/o) device in the first region. a second semiconductor device excluding a gate dielectric is on the second region. the second semiconductor device can implement a nanosheet-based logic device in the second region.