18520214. SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jung-Chien Cheng of Tainan City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Shi Ning Ju of Hsinchu City (TW)

Guan-Lin Chen of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

SEMICONDUCTOR DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18520214 titled 'SEMICONDUCTOR DEVICE STRUCTURE

Simplified Explanation

The semiconductor structure described in the patent application includes a substrate with a p-type well or an n-type well, first and second base portions, a plurality of channel members, an isolation feature, and a deep isolation structure.

  • The semiconductor structure includes a substrate with a p-type well or an n-type well.
  • The structure has first and second base portions over the respective wells.
  • A first plurality of channel members is located over the first base portion, while a second plurality of channel members is over the second base portion.
  • An isolation feature is positioned between the first and second base portions.
  • A deep isolation structure in the substrate is located below the isolation feature.

Potential Applications

The semiconductor structure described in the patent application could be used in:

  • Integrated circuits
  • Microprocessors
  • Memory devices

Problems Solved

This technology helps address issues related to:

  • Isolation of different types of wells in a semiconductor substrate
  • Enhancing the performance and reliability of semiconductor devices

Benefits

The benefits of this technology include:

  • Improved efficiency of semiconductor devices
  • Enhanced isolation between different components
  • Higher performance and reliability of integrated circuits

Potential Commercial Applications

The semiconductor structure described in the patent application has potential commercial applications in:

  • Electronics industry
  • Semiconductor manufacturing companies
  • Research and development organizations

Possible Prior Art

One possible prior art related to this technology could be:

  • Existing methods for isolating different types of wells in semiconductor structures.


Original Abstract Submitted

Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.