US Patent Application 17825698. SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING simplified abstract

SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chih-Yu Lu of Hsinchu County (TW)]]

[[Category:Chih-Yu Lai of Hsinchu County (TW)]]

[[Category:Meng-Hsueh Wang of Hsinchu County (TW)]]

[[Category:Chih-Liang Chen of Hsinchu County (TW)]]

[[Category:Shang Hsuan Chiu of Hsinchu County (TW)]]

SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17825698 titled 'SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING

Simplified Explanation

The patent application describes a semiconductor device that includes multiple source/drain structures for transistors.

• The device has a first source/drain structure and a second source/drain structure for a first transistor.
• It also has a third source/drain structure and a fourth source/drain structure for a second transistor.
• The second source/drain structure and the third source/drain structure merge to form a common source/drain structure.
• The device includes a first interconnect structure that extends in a specific direction and is positioned above the common source/drain structure.
• A first dielectric structure is placed between the first interconnect structure and the common source/drain structure.

Original Abstract Submitted

A semiconductor device includes a first source/drain structure and a second source/drain structure of a first transistor. The semiconductor device includes a first source/drain structure and a second source/drain structure of a first transistor. The semiconductor device includes a third source/drain structure and a fourth source/drain structure of a second transistor. The second source/drain structure and the third source/drain structure merges as a common source/drain structure. The semiconductor device includes a first interconnect structure extending along a first lateral direction and disposed above the common source/drain structure. The semiconductor device includes a first dielectric structure interposed between the first interconnect structure and the common source/drain structure.