18522687. UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jui-Chien Huang of Hsinchu City (TW)

Shih-Cheng Chen of New Taipei City (TW)

Chih-Hao Wang of Hsinchu County (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Zhi-Chang Lin of Hsinchu County (TW)

Jung-Hung Chang of Hsinchu (TW)

Lo-Heng Chang of Hsinchu (TW)

Shi Ning Ju of Hsinchu City (TW)

Guan-Lin Chen of Hsinchu County (TW)

UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18522687 titled 'UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES

Simplified Explanation

The semiconductor device described in the abstract includes a fin stack with nanostructures, gate devices surrounding the nanostructures, and inner spacers between the nanostructures and along the gate devices. The width of the inner spacers varies between different layers of the fin stack.

• The semiconductor device includes a substrate and a fin stack with nanostructures.
• Each nanostructure is surrounded by a gate device.
• Inner spacers are present along the gate device and between the nanostructures.
• The width of the inner spacers differs across various layers of the fin stack.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced semiconductor manufacturing processes
• High-performance electronic devices
• Nanotechnology research and development

Problems Solved

This technology addresses the following issues:

• Enhancing the performance and efficiency of semiconductor devices
• Improving the integration of nanostructures in electronic components
• Optimizing the design and fabrication of advanced electronic systems

Benefits

The benefits of this technology include:

• Increased speed and functionality of semiconductor devices
• Enhanced precision and control in nanostructure placement
• Potential for developing smaller and more powerful electronic devices

Potential Commercial Applications

The technology has potential commercial applications in:

• Semiconductor industry for manufacturing cutting-edge electronic components
• Consumer electronics for producing high-performance devices
• Research institutions for advancing nanotechnology studies

Possible Prior Art

One possible prior art related to this technology is the use of inner spacers in semiconductor devices to control the spacing and alignment of components within the device. This technique has been utilized in previous semiconductor manufacturing processes to improve device performance and reliability.

Unanswered Questions

How does the variation in width of inner spacers impact the overall performance of the semiconductor device?

The abstract mentions that the width of the inner spacers differs between layers of the fin stack, but it does not elaborate on the specific effects of this variation on the device's functionality.

What specific materials are used in the fabrication of the nanostructures and inner spacers in this semiconductor device?

The abstract provides an overview of the components present in the device but does not detail the materials used in their construction, which could be crucial for understanding the device's properties and performance.

Original Abstract Submitted

According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.