Taiwan semiconductor manufacturing co., ltd. (20240096867). SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK simplified abstract

SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Charles Chew-Yuen Young of Cupertino CA (US)

Chih-Liang Chen of Hsinchu City (TW)

Chih-Ming Lai of Hsinchu City (TW)

Jiann-Tyng Tzeng of Hsinchu City (TW)

Shun-Li Chen of Tainan City (TW)

Kam-Tou Sio of Hsinchu County (TW)

Shih-Wei Peng of Hsinchu City (TW)

Chun-Kuang Chen of Hsinchu County (TW)

Ru-Gun Liu of Hsinchu County (TW)

SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096867 titled 'SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN CONTACT HAVING HEIGHT BELOW GATE STACK

Simplified Explanation

The semiconductor structure described in the abstract includes a first gate structure, a second gate structure, and at least one local interconnect that extends continuously across a non-active region from a first active region to a second active region. Additionally, the structure includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer, isolated from each other, and apart from the first separation spacer by different distances.

• First gate structure, second gate structure, and local interconnect are key components of the semiconductor structure.
• First separation spacer and first vias play a crucial role in the structure's design and functionality.

Potential Applications

The technology described in this patent application could be applied in:

• Advanced semiconductor devices
• Integrated circuits requiring precise interconnects

Problems Solved

This technology addresses the following issues:

• Efficient routing of interconnects across non-active regions
• Improved isolation and spacing of vias for enhanced performance

Benefits

The benefits of this technology include:

• Enhanced performance and reliability of semiconductor structures
• Increased efficiency in interconnect design and layout

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor manufacturing industry
• Electronics and technology companies

Possible Prior Art

One possible prior art for this technology could be:

• Existing semiconductor structures with similar interconnect designs and vias.

How does this technology compare to existing interconnect solutions in terms of performance and efficiency?

This article does not provide a direct comparison with existing interconnect solutions in terms of performance and efficiency. Further research or testing may be required to make a detailed comparison.

What are the potential limitations or challenges in implementing this technology on a larger scale in semiconductor manufacturing?

The article does not address the potential limitations or challenges in implementing this technology on a larger scale in semiconductor manufacturing. Additional studies or practical applications may reveal any such limitations or challenges.

Original Abstract Submitted

a semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. the semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. the first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.