Taiwan semiconductor manufacturing company, ltd. (20240105775). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chung-Yu Chiang of Yuanlin Township (TW)

Hsiao-Han Liu of Gongguan Township (TW)

Yuan-Hung Tseng of Hsinchu County (TW)

Chih-Yung Lin of Hsinchu County (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105775 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes a method for forming a semiconductor device structure involving multiple gate stacks and contact structures.

• The method includes forming first and second source/drain structures on a substrate.
• Multiple gate stacks are then formed over the substrate, with the first and second gate stacks wider than the third and fourth gate stacks.
• First and second contact structures are formed over the respective first and second source/drain structures, with their average widths being substantially equal.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for use in electronics and computing.

Problems Solved

This method helps in improving the performance and efficiency of semiconductor devices by optimizing the gate and contact structures, leading to better overall functionality.

Benefits

The method allows for more precise control over the semiconductor device's operation, leading to enhanced performance, reduced power consumption, and increased reliability.

Potential Commercial Applications

The technology could find applications in the semiconductor industry for producing cutting-edge electronic devices with improved performance and energy efficiency.

Possible Prior Art

One possible prior art could be the use of different gate and contact structures in semiconductor device fabrication to enhance device performance and functionality.

How does this method compare to existing semiconductor fabrication techniques in terms of cost-effectiveness?

This article does not provide information on the cost implications of implementing this method compared to traditional semiconductor fabrication techniques.

What are the specific performance improvements achieved by the optimized gate and contact structures in this method?

The article does not detail the specific performance enhancements resulting from the optimized gate and contact structures in this method.

Original Abstract Submitted

a method for forming a semiconductor device structure is provided. the method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. the method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. the method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. a first average width of the first contact structure is substantially equal to a second average width of the second contact structure.