US Patent Application 18344441. Semiconductor Device and Method simplified abstract
Contents
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ching-Feng Fu of Taichung City (TW)
Yu-Lien Huang of Jhubei City (TW)
Tsai-Jung Ho of Xihu Township (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18344441 titled 'Semiconductor Device and Method
Simplified Explanation
The patent application describes a method for forming openings in a semiconductor structure to expose source and drain regions.
- The method involves forming a first inter-layer dielectric (ILD) layer over the source and drain regions.
- A first mask material is then formed over the first ILD layer.
- First openings are etched in the first mask material.
- These first openings are filled with a fill material.
- Second openings are etched in the fill material.
- The second openings are filled with a second mask material.
- The fill material is removed.
- The first ILD layer is etched using the first and second mask materials as an etching mask.
- This etching forms openings in the first ILD layer, exposing portions of the source and drain regions.
Original Abstract Submitted
A method includes forming a first inter-layer dielectric (ILD) layer over source and drain regions of a semiconductor structure; forming a first mask material over the first ILD layer; etching first openings in the first mask material; filling the first openings with a fill material; etching second openings in the fill material; filling the second openings with a second mask material; removing the fill material; and etching the first ILD layer using the first mask material and the second mask material as an etching mask to form openings in the first ILD layer that expose portions of the source and drain regions of the semiconductor structure.
