Taiwan semiconductor manufacturing company, ltd. (20240105517). SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Xusheng Wu of Hsinchu County (TW)

Ying-Keung Leung of Hsinchu City (TW)

Huiling Shang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105517 titled 'SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device and its manufacturing method, which includes multiple semiconductor stacks, inner spacers, and a bulk source/drain feature separated by air gaps.

• The semiconductor device comprises:

 - First semiconductor stack with layers stacked perpendicular to the substrate.
 - Second semiconductor stack with layers also stacked perpendicular to the substrate.
 - Inner spacers between the edge portions of the semiconductor layers.
 - Bulk source/drain feature separated from the substrate by air gaps.

Potential Applications

This technology could be applied in: - Advanced integrated circuits - High-performance computing systems - Power electronics

Problems Solved

This technology addresses: - Improved performance and efficiency of semiconductor devices - Reduction of parasitic capacitance - Enhanced thermal management

Benefits

The benefits of this technology include: - Increased speed and reliability of semiconductor devices - Lower power consumption - Better heat dissipation

Potential Commercial Applications

This technology could be commercially applied in: - Semiconductor manufacturing industry - Electronics and consumer electronics sector - Automotive industry

Possible Prior Art

One possible prior art could be the use of air gaps in semiconductor devices to reduce parasitic capacitance and improve performance. However, the specific configuration of multiple semiconductor stacks with inner spacers and bulk source/drain feature as described in this patent application may be novel and inventive.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate the performance and efficiency improvements offered by this technology.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?

The article does not address the potential challenges or limitations that may arise in scaling up the production of semiconductor devices using this technology.

Original Abstract Submitted

semiconductor device and the manufacturing method thereof are disclosed. an exemplary semiconductor device comprises first semiconductor stack over a substrate, wherein the first semiconductor stack includes first semiconductor layers separated from each other and stacked up along a direction substantially perpendicular to a top surface of the substrate; second semiconductor stack over the substrate, wherein the second semiconductor stack includes second semiconductor layers separated from each other and stacked up along the direction substantially perpendicular to the top surface of the substrate; inner spacers between edge portions of the first semiconductor layers and between edge portions of the second semiconductor layers; and a bulk source/drain (s/d) feature between the first semiconductor stack and the second semiconductor stack, wherein the bulk s/d feature is separated from the substrate by a first air gap, and the bulk s/d feature is separated from the inner spacers by second air gaps.