Taiwan semiconductor manufacturing co., ltd. (20240096892). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096892 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the patent application includes a first fin structure with a first recess, a first source/drain feature, and a first gate structure. The first fin structure extends from a substrate and has a tapering profile on the sidewall of the first recess. The first gate structure is disposed in the first recess and has a gate dielectric layer with a sidewall surface and a bottom surface in contact with the sidewall and the bottom of the first recess, respectively.
- First fin structure with a tapering profile on the sidewall of the first recess
- First gate structure with a gate dielectric layer in contact with the sidewall and bottom of the first recess
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive electronics.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the control of electrical signals within the device structure. The tapering profile of the first fin structure and the precise placement of the gate structure contribute to better device functionality.
Benefits
The benefits of this technology include increased device performance, reduced power consumption, and improved reliability of semiconductor devices. The precise design and construction of the device structure lead to enhanced overall functionality and operational efficiency.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of advanced integrated circuits, microprocessors, and memory devices. Companies involved in semiconductor manufacturing could benefit from incorporating this innovative device structure into their product lines.
Possible Prior Art
One possible prior art for this technology could be the development of semiconductor devices with fin structures and gate structures, but with different configurations or materials. Research and patents related to semiconductor device structures with similar features may exist in the prior art.
Original Abstract Submitted
a semiconductor device structure, along with methods of forming such, are described. the semiconductor device structure includes a first fin structure disposed at a first device region and extending from a substrate along a first direction, wherein the first fin structure comprises a first recess formed in a top of the first fin structure, the first recess having a bottom and a sidewall extending upwardly from the bottom, wherein the sidewall has a tapering profile. the structure also includes a first source/drain feature in contact with the first fin structure, and a first gate structure disposed in the first recess, the first gate structure extending along a second direction perpendicular to the first direction, wherein the first gate structure has a first gate dielectric layer, and the first gate dielectric layer has a sidewall surface and a bottom surface in contact with the sidewall and the bottom of the first recess, respectively.
