Taiwan semiconductor manufacturing company, ltd. (20240136428). Semiconductor Device and Method simplified abstract
Contents
- 1 Semiconductor Device and Method
Semiconductor Device and Method
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136428 titled 'Semiconductor Device and Method
Simplified Explanation
The abstract describes improved inner spacers for semiconductor devices, with a specific structure involving two layers with different compositions to achieve a lower dielectric constant.
- The semiconductor device includes a substrate, semiconductor channel structures, a gate structure, source/drain regions, and inner spacers.
- The inner spacer consists of a first layer with silicon and nitrogen, and a second layer with silicon, oxygen, and nitrogen, providing a lower dielectric constant.
- The innovation aims to improve the performance and efficiency of semiconductor devices by reducing parasitic capacitance and enhancing electrical properties.
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices such as transistors, integrated circuits, and microprocessors.
Problems Solved
The innovation addresses issues related to parasitic capacitance, electrical interference, and performance limitations in semiconductor devices.
Benefits
The use of improved inner spacers can lead to enhanced device performance, reduced power consumption, and increased reliability in semiconductor applications.
Potential Commercial Applications
The technology can be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and automotive.
Possible Prior Art
Previous methods of forming inner spacers in semiconductor devices may not have utilized the specific dual-layer structure described in this patent application.
Unanswered Questions
How does the new inner spacer design impact the overall manufacturing process of semiconductor devices?
The article does not provide details on the potential changes or challenges in the manufacturing process that may arise from implementing the new inner spacer design.
What specific performance improvements can be expected from using the dual-layer inner spacer structure?
The abstract mentions a lower dielectric constant, but it does not elaborate on the specific performance enhancements that can be achieved by incorporating this innovation.
Original Abstract Submitted
improved inner spacers for semiconductor devices and methods of forming the same are disclosed. in an embodiment, a semiconductor device includes a substrate; a plurality of semiconductor channel structures over the substrate; a gate structure over the semiconductor channel structures, the gate structure extending between adjacent ones of the semiconductor channel structures; a source/drain region adjacent of the gate structure, the source/drain region contacting the semiconductor channel structures; and an inner spacer interposed between the source/drain region and the gate structure, the inner spacer including a first inner spacer layer contacting the gate structure and the source/drain region, the first inner spacer layer including silicon and nitrogen; and a second inner spacer layer contacting the first inner spacer layer and the source/drain region, the second inner spacer layer including silicon, oxygen, and nitrogen, the second inner spacer layer having a lower dielectric constant than the first inner spacer layer.
