US Patent Application 18349617. SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF simplified abstract

SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Cheng-Ting Chung of Hsinchu City (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18349617 titled 'SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF

Simplified Explanation

The patent application describes a semiconductor structure with multiple semiconductor channel layers, gate structures, and source/drain features.

• The structure includes at least two semiconductor channel layers stacked on top of each other.
• Each semiconductor channel layer is wrapped by a gate structure.
• First and second source/drain features are located on opposite sides of the gate structure.
• All the components mentioned above are located on the frontside of the semiconductor structure.
• One of the semiconductor channel layers does not have any contact with the first source/drain feature.

Original Abstract Submitted

A semiconductor structure includes a stack of at least two semiconductor channel layers, a gate structure wrapping each of the semiconductor channel layers, and first and second source/drain (S/D) features disposed on opposing sides of the gate structure. The first and second S/D features, the semiconductor channel layers, and the gate structure are at a frontside of the semiconductor structure. At least one of the semiconductor channel layers is free of contact with the first S/D feature.