US Patent Application 18359492. Semiconductor Device and Method simplified abstract
Contents
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jen-Chih Hsueh of Kaohsiung City (TW)
Chih-Chang Hung of Hsinchu (TW)
Tsung Fan Yin of Kaohsiung City (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359492 titled 'Semiconductor Device and Method
Simplified Explanation
The patent application describes a method for forming semiconductor fins and gate structures in a substrate.
- The method involves creating two semiconductor fins adjacent to each other in the substrate.
- A dummy gate structure is formed over the semiconductor fins.
- A first dielectric material is deposited around the dummy gate structure.
- The dummy gate structure is replaced with a metal gate structure.
- An etching process is performed on the metal gate structure and the first dielectric material to create recesses.
- The recesses extend into the substrate and are located between the semiconductor fins.
- A second dielectric material is deposited within the recesses.
Original Abstract Submitted
A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.
