Taiwan semiconductor manufacturing co., ltd. (20240096705). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Kuei-Yu Kao of Hsinchu (TW)

Chen-Yui Yang of Hsinchu City (TW)

Hsien-Chung Huang of Hsinchu City (TW)

Chao-Cheng Chen of Hsinchu City (TW)

Shih-Yao Lin of New Taipei City (TW)

Chih-Chung Chiu of Hsinchu City (TW)

Chih-Han Lin of Hsinchu City (TW)

Chen-Ping Chen of Toucheng Township (TW)

Ke-Chia Tseng of Hsinchu City (TW)

Ming-Ching Chang of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096705 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes multiple channel layers separated vertically, an active gate structure with lower and upper portions, a gate spacer along the upper portion, and a dummy gate dielectric layer between the gate spacer and the topmost channel layer.

• The semiconductor device has a unique active gate structure that wraps around each of the channel layers, providing efficient control over the flow of electrical current.
• The gate spacer helps to further control the flow of current by extending along the sidewall of the upper portion of the active gate structure.
• The dummy gate dielectric layer enhances the performance of the device by providing insulation and stability to the topmost channel layer.

Potential Applications

This technology could be applied in:

• Advanced semiconductor devices
• High-performance electronics
• Power management systems

Problems Solved

This technology helps to address issues related to:

• Efficient current control
• Enhanced device performance
• Improved stability and insulation

Benefits

The benefits of this technology include:

• Increased efficiency in current control
• Enhanced device performance and stability
• Improved overall functionality of semiconductor devices

Potential Commercial Applications

This technology could be commercially applied in:

• Semiconductor manufacturing companies
• Electronics industry
• Research and development organizations

Possible Prior Art

One possible prior art for this technology could be:

• Previous semiconductor devices with similar active gate structures and channel layer configurations.

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world applications.

Original Abstract Submitted

a semiconductor device includes a plurality of channel layers vertically separated from one another. the semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. the lower portion wraps around each of the plurality of channel layers. the semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. the gate spacer has a bottom surface. moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. the dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.