US Patent Application 18351149. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Zheng-Long Chen of New Taipei City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18351149 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor device with a substrate, two gate structures, and an epitaxy layer.

  • The device includes a substrate, which serves as a base for the other components.
  • There are two gate structures, each consisting of a shielding electrode, a gate electrode, and a first gate dielectric layer.
  • The first gate dielectric layer separates the shielding electrode from the gate electrode.
  • The epitaxy layer is positioned above the substrate and covers the underside of the gate structures.
  • The epitaxy layer contains a doped region that is located between the first gate dielectric layers of the two gate structures.
  • The dopant concentration in the doped region varies along a lateral direction.


Original Abstract Submitted

A semiconductor device includes substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first gate structure and the second gate structure are over the substrate, in which the first gate structure and the second gate structure each comprises a shielding electrode, a gate electrode over the shielding electrode, and a first gate dielectric layer vertically separating the shielding electrode from the gate electrode. The epitaxy layer is over the substrate and cups an underside of the first gate structure and the second gate structure, in which the epitaxy layer comprises a doped region laterally between the first gate dielectric layer of the first gate structure and the first gate dielectric layer of the second gate structure, a dopant concentration of the doped region being non-uniform along a lateral direction.

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