Taiwan semiconductor manufacturing company, ltd. (20240105460). Hard Mask Removal Method simplified abstract
Contents
- 1 Hard Mask Removal Method
Hard Mask Removal Method
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
William Weilun Hong of Hsinchu (TW)
Ying-Tsung Chen of Hsinchu (TW)
Hard Mask Removal Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105460 titled 'Hard Mask Removal Method
Simplified Explanation
The abstract describes a method for removing a hard mask from gate stacks on a substrate by depositing a dielectric layer, planarizing it using chemical mechanical polishing (CMP), and then removing the hard mask and excess dielectric layer through CMP.
- Gate stacks are patterned on a substrate.
- Gate stacks include a polysilicon layer and a hard mask.
- A dielectric layer is deposited on the substrate and gate stacks.
- A portion of the dielectric layer is planarized using CMP.
- The hard mask and excess dielectric layer are removed by CMP.
Potential Applications
This technology could be applied in semiconductor manufacturing processes where precise removal of hard masks is required.
Problems Solved
This method solves the problem of efficiently and effectively removing hard masks from gate stacks without damaging the underlying layers.
Benefits
The benefits of this technology include improved manufacturing processes, increased yield rates, and enhanced device performance.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of advanced semiconductor devices for various electronic applications.
Possible Prior Art
One possible prior art could be the use of different methods for removing hard masks in semiconductor manufacturing processes, such as wet etching or plasma etching techniques.
Unanswered Questions
How does this method compare to other techniques for hard mask removal in terms of efficiency and cost-effectiveness?
This article does not provide a direct comparison with other techniques for hard mask removal, so it is unclear how this method stacks up against alternative approaches.
What are the potential challenges or limitations of implementing this method in large-scale semiconductor manufacturing facilities?
The article does not address the potential challenges or limitations of implementing this method on an industrial scale, leaving room for further exploration of this aspect.
Original Abstract Submitted
a method of removing a hard mask is provided. gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. a dielectric layer is deposited on the substrate and on the patterned gate stacks. a first portion of the dielectric layer is planarized by chemical mechanical polishing (cmp) to remove a topography of the dielectric layer. the hard mask and a second portion of the dielectric layer are removed by the cmp.
