US Patent Application 18359747. REPLACEMENT GATE PROCESS FOR SEMICONDUCTOR DEVICES simplified abstract

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REPLACEMENT GATE PROCESS FOR SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yu-Jen Shen of Hsin-Chu (TW)]]

[[Category:Ying-Ho Chen of Taipei (TW)]]

[[Category:Yung-Cheng Lu of Hsinchu City (TW)]]

REPLACEMENT GATE PROCESS FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359747 titled 'REPLACEMENT GATE PROCESS FOR SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a method for forming a semiconductor device.

  • The method involves using a precursor with a substrate and gate stacks.
  • Each gate stack has an electrode layer, a first hard mask (HM) layer, and a second HM layer.
  • A dielectric layer is deposited over the substrate and gate stacks, filling the spaces between the gate stacks.
  • A first chemical mechanical planarization (CMP) process is performed to partially remove the dielectric layer.
  • An etching process is then used to remove the second HM layer and partially remove the dielectric layer, exposing the first HM layer.
  • Finally, a second CMP process is performed to at least partially remove the first HM layer.


Original Abstract Submitted

Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and gate stacks over the substrate, wherein each of the gate stacks includes an electrode layer, a first hard mask (HM) layer over the electrode layer, and a second HM layer over the first HM layer. The method further includes depositing a dielectric layer over the substrate and the gate stacks and filling spaces between the gate stacks; and performing a first chemical mechanical planarization (CMP) process to partially remove the dielectric layer. The method further includes performing an etching process to remove the second HM layer and to partially remove the dielectric layer, thereby exposing the first HM layer. The method further includes performing a second CMP process to at least partially remove the first HM layer.

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