Taiwan semiconductor manufacturing co., ltd. (20240098959). FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract

FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Kai-Hsuan Lee of Hsinchu (TW)

Chia-Ta Yu of New Taipei City (TW)

Cheng-Yu Yang of Xihu Township (TW)

Sheng-Chen Wang of Hsinchu (TW)

Sai-Hooi Yeong of Zhubei City (TW)

Feng-Cheng Yang of Zhudong Township (TW)

Yen-Ming Chen of Chu-Pei City (TW)

FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240098959 titled 'FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS

Simplified Explanation

The method described in the abstract involves etching semiconductor fins to form recesses and then performing epitaxy to grow semiconductor regions from these recesses. The first epitaxy semiconductor regions are merged with each other, while the second epitaxy semiconductor regions are separated from each other.

• Etching of semiconductor fins to form recesses
• Performing epitaxy to grow semiconductor regions from the recesses
• Merging the first epitaxy semiconductor regions with each other
• Separating the second epitaxy semiconductor regions from each other

Potential Applications

This technology could be applied in the semiconductor industry for the fabrication of advanced electronic devices such as transistors and integrated circuits.

Problems Solved

This technology solves the problem of efficiently growing semiconductor regions from recesses in semiconductor fins, allowing for improved device performance and integration.

Benefits

The benefits of this technology include enhanced device performance, increased integration density, and improved manufacturing efficiency in the semiconductor industry.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of high-performance electronic devices for various applications such as smartphones, computers, and automotive electronics.

Possible Prior Art

One possible prior art for this technology could be the use of selective epitaxy techniques in semiconductor manufacturing processes to grow semiconductor regions from recesses in semiconductor structures.

How does this technology compare to existing methods for growing semiconductor regions from recesses in semiconductor fins?

This article does not provide a direct comparison with existing methods, so it is unclear how this technology differs in terms of efficiency, performance, and cost-effectiveness.

What are the specific semiconductor materials used in this technology, and how do they impact the performance of the resulting electronic devices?

The article does not specify the semiconductor materials used in the epitaxy process, so it is unknown how these materials may affect the performance characteristics of the electronic devices produced using this technology.

Original Abstract Submitted

a method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. the first and the second semiconductor fins have a first distance. a third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. the third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. an epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. the first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.