Taiwan semiconductor manufacturing co., ltd. (20240096707). Footing Removal in Cut-Metal Process simplified abstract
Contents
- 1 Footing Removal in Cut-Metal Process
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Footing Removal in Cut-Metal Process - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Footing Removal in Cut-Metal Process
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ming-Chi Huang of Zhubei City (TW)
Kuo-Bin Huang of Jhubei City (TW)
Ying-Liang Chuang of Zhubei City (TW)
Footing Removal in Cut-Metal Process - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096707 titled 'Footing Removal in Cut-Metal Process
Simplified Explanation
The method described in the abstract involves forming a gate stack over semiconductor fins, performing anisotropic and isotropic etching to create an opening in the gate stack, and filling the opening with a dielectric material.
- Gate stack formed over semiconductor fins
- Anisotropic etching to create opening in gate stack
- Isotropic etching to remove metal gate portion
- Filling opening with dielectric material
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors, where precise control over the gate structure is crucial for performance.
Problems Solved
This technology solves the problem of creating a gate structure with improved precision and control, allowing for better performance and efficiency in semiconductor devices.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption in semiconductor devices.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of high-performance processors for computers and mobile devices.
Possible Prior Art
Prior art in the field of semiconductor manufacturing may include similar methods for forming gate structures over semiconductor fins, but the specific combination of anisotropic and isotropic etching steps as described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing methods for gate stack formation in terms of efficiency and precision?
This article does not provide a direct comparison with existing methods for gate stack formation, leaving the reader to wonder about the advantages and disadvantages of this new approach.
What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations that may arise when implementing this technology in mass production, leaving room for further exploration of the practical implications of this innovation.
Original Abstract Submitted
a method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. an anisotropic etching is performed on the third portion of the gate stack to form an opening between the first portion and the second portion. a footing portion of the third portion remains after the anisotropic etching. the method further includes performing an isotropic etching to remove a metal gate portion of the footing portion, and filling the opening with a dielectric material.
