Taiwan semiconductor manufacturing co., ltd. (20240096993). TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF simplified abstract

TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Shen-Yang Lee of Miaoli County (TW)

Hsiang-Pi Chang of New Taipei City (TW)

Huang-Lin Chao of Hillsboro OR (US)

TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096993 titled 'TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF

Simplified Explanation

The patent application describes a method for tuning the threshold voltage of a transistor by manipulating the dipole layer in the gate dielectric layer.

• A channel layer is formed over a substrate.
• An interfacial layer is formed over and surrounds the channel layer.
• A gate dielectric layer is formed over and surrounds the interfacial layer.
• A dipole layer is formed over and wraps around the gate dielectric layer through a cyclic deposition-etch process.
• The dipole layer includes dipole metal elements and has a uniform thickness.
• A thermal drive-in process is performed to drive the dipole metal elements into the gate dielectric layer to form an interfacial dipole surface.
• The dipole layer is then removed.

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1. 1. 1. Potential Applications

This technology could be applied in the semiconductor industry for optimizing the performance of transistors in various electronic devices.

1. 1. 1. Problems Solved

This technology solves the problem of efficiently tuning the threshold voltage of transistors, which is crucial for the proper functioning of electronic devices.

1. 1. 1. Benefits

- Improved performance of transistors - Enhanced efficiency in electronic devices - Precise control over threshold voltage tuning

1. 1. 1. Potential Commercial Applications
         1. Optimizing Transistor Performance in Electronic Devices

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1. 1. 1. Possible Prior Art

One possible prior art could be the use of different materials or processes to tune the threshold voltage of transistors in electronic devices.

1. 1. 1. Unanswered Questions
         1. How does this method compare to existing techniques for tuning threshold voltage in transistors?

This article does not provide a direct comparison with existing techniques, leaving room for further exploration of the advantages and disadvantages of this method.

1. 1. 1. 1. Are there any limitations or drawbacks to this method that need to be considered?

The article does not mention any potential limitations or drawbacks of this method, which could be crucial for understanding its practical implications and feasibility in real-world applications.

Original Abstract Submitted

a method for tuning a threshold voltage of a transistor is disclosed. a channel layer is formed over a substrate. an interfacial layer is formed over and surrounds the channel layer. a gate dielectric layer is formed over and surrounds the interfacial layer. a dipole layer is formed over and wraps around the gate dielectric layer by performing a cyclic deposition etch process, and the dipole layer includes dipole metal elements and has a substantially uniform thickness. a thermal drive-in process is performed to drive the dipole metal elements in the dipole layer into the gate dielectric layer to form an interfacial dipole surface, and then the dipole layer is removed.