Taiwan semiconductor manufacturing company, ltd. (20240105849). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Da-Zhi Zhang of Hsinchu (TW)

Chun-An Lu of Hsinchu County (TW)

Chung-Yu Chiang of Yuanlin Township (TW)

Po-Nien Chen of Miaoli County (TW)

Hsiao-Han Liu of Miaoli County (TW)

Jhon-Jhy Liaw of Zhudong Township (TW)

Chih-Yung Lin of Hsinchu County (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105849 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The method described in the patent application involves forming a semiconductor structure by creating a fin structure over a substrate, then adding three gate stacks across the fin structure. The first gate stack is removed to create a trench, into which a cutting structure is deposited. Contact plugs are formed between the cutting structure and the second and third gate stacks. The fin structure is divided into two segments by the trench, with the first contact plug having a larger dimension than the second contact plug in the first direction.

• Formation of fin structure over substrate
• Addition of three gate stacks across fin structure
• Removal of first gate stack to create trench
• Deposition of cutting structure in trench
• Formation of contact plugs between cutting structure and gate stacks
• Division of fin structure into two segments by trench
• Difference in dimensions between first and second contact plugs

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

This technology addresses the challenge of efficiently forming semiconductor structures with precise dimensions and connections between different components.

Benefits

The benefits of this technology include improved performance and reliability of semiconductor devices, as well as potentially reducing manufacturing costs through more efficient processes.

Potential Commercial Applications

Potential commercial applications of this technology include the production of next-generation electronic devices, data processing systems, and communication equipment.

Possible Prior Art

One possible prior art for this technology could be the use of similar cutting structures in semiconductor manufacturing processes to create precise connections between different components.

How does this technology compare to existing methods for forming semiconductor structures?

This article does not provide a direct comparison between this technology and existing methods for forming semiconductor structures.

What are the specific dimensions and materials used in the contact plugs and cutting structure?

The article does not specify the exact dimensions and materials used in the contact plugs and cutting structure.

Original Abstract Submitted

a method for forming a semiconductor structure is provided. the method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. the fin structure is cut into two segments by the trench. a first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.