Taiwan semiconductor manufacturing company, ltd. (20240120376). TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS simplified abstract
Contents
- 1 TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Po Shao Lin of Taipei City (TW)
Jiun-Ming Kuo of Taipei City (TW)
Yuan-Ching Peng of Hsinchu (TW)
You-Ting Lin of Miaoli County (TW)
Yu Mei Jian of Nantou County (TW)
TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120376 titled 'TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS
Simplified Explanation
The semiconductor structure described in the abstract includes a first active region, a second active region, and an epitaxial feature sandwiched between them. The first active region is wider than the second active region.
- The semiconductor structure includes a first active region and a second active region.
- An epitaxial feature is sandwiched between the first and second active regions.
- The first active region is wider than the second active region.
Potential Applications
This semiconductor structure could be used in:
- High-performance electronic devices
- Power electronics
- Optoelectronic devices
Problems Solved
This technology helps address issues related to:
- Improving device performance
- Enhancing efficiency
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased device performance
- Enhanced efficiency
- Lower power consumption
Potential Commercial Applications
This technology could be applied in various industries, including:
- Electronics manufacturing
- Semiconductor industry
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor structures with different active regions and epitaxial features.
Unanswered Questions
How does this technology compare to existing semiconductor structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor structures in terms of performance and efficiency. Further research and testing may be needed to determine the advantages of this technology over existing ones.
What are the specific manufacturing processes involved in creating this semiconductor structure?
The article does not detail the specific manufacturing processes involved in creating this semiconductor structure. Understanding the manufacturing processes could provide insights into the scalability and cost-effectiveness of implementing this technology.
Original Abstract Submitted
semiconductor structures and methods are provided. a semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region extending lengthwise along the first direction and having a second width along the second direction, and an epitaxial feature sandwiched between the first active region and the second active region along the first direction. the first width is greater than the second width.
