Taiwan semiconductor manufacturing co., ltd. (20240096985). SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chen-Ming Lee of Taoyuan County (TW)
Fu-Kai Yang of Hsinchu City (TW)
SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096985 titled 'SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF
Simplified Explanation
The patent application describes methods and devices involving an air gap adjacent to a contact element extending to a source/drain feature of a device. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.
- Air gap adjacent to a contact element
- Dummy layer deposited and subsequently removed to form the air gap
- SAC dielectric layer like silicon nitride used in the process
- Metal gate structure involved in the formation
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of advanced electronic devices with improved performance and efficiency.
Problems Solved
This technology addresses the challenge of reducing parasitic capacitance in semiconductor devices, which can improve overall device speed and power consumption.
Benefits
The use of an air gap adjacent to a contact element can help enhance the performance of semiconductor devices by reducing interference and improving signal transmission efficiency.
Potential Commercial Applications
The technology could be utilized in the production of high-speed processors, memory chips, and other semiconductor devices to enhance their performance and energy efficiency.
Possible Prior Art
One possible prior art could be the use of sacrificial layers in semiconductor manufacturing processes to create voids or gaps for various purposes.
What materials are commonly used for dummy layers in semiconductor manufacturing processes?
Common materials used for dummy layers include silicon dioxide, silicon nitride, and various photoresists.
How does the presence of an air gap near a contact element impact the overall performance of a semiconductor device?
The presence of an air gap can help reduce parasitic capacitance, which in turn can improve signal integrity and overall device speed.
Original Abstract Submitted
methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. the dummy layer and subsequent air gap may be formed after a sac dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.
