Taiwan semiconductor manufacturing co., ltd. (20240097011). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Han-Yu Lin of Nantou County (TW)

Fang-Wei Lee of Hsinchu City (TW)

Kai-Tak Lam of Hsinchu City (TW)

Raghunath Putikam of Hsinchu City (TW)

Tzer-Min Shen of Hsinchu City (TW)

Li-Te Lin of Hsinchu City (TW)

Pinyen Lin of Rochester NY (US)

Cheng-Tzu Yang of Hsinchu County (TW)

Tzu-Li Lee of Yunlin County (TW)

Tze-Chung Lin of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097011 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The method described in the abstract involves a process for forming a fin structure with alternating semiconductor layers, selectively etching the layers, and replacing them with a metal gate structure.

• Formation of fin structure with alternating semiconductor layers
• Formation of dummy gate structure
• Selective etching process to laterally recess the semiconductor layers
• Formation of inner spacers on the laterally recessed layers
• Replacement of dummy gate structure and semiconductor layers with metal gate structure

Potential Applications

The technology described in the patent application could be applied in the semiconductor industry for the fabrication of advanced transistors with improved performance and efficiency.

Problems Solved

This technology addresses the need for more precise and efficient methods for fabricating semiconductor devices with complex structures, such as fin field-effect transistors.

Benefits

The benefits of this technology include enhanced transistor performance, increased device density, and improved power efficiency in electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of high-performance processors, memory chips, and other semiconductor devices for various electronic products.

Possible Prior Art

One possible prior art for this technology could be the use of similar selective etching processes in semiconductor manufacturing to create intricate device structures.

How does this technology compare to existing methods for fabricating semiconductor devices?

This technology offers a more precise and efficient process for creating complex semiconductor structures, potentially leading to improved device performance and functionality.

What are the potential challenges or limitations of implementing this technology in semiconductor manufacturing?

Some potential challenges could include optimizing the process parameters for different semiconductor materials, ensuring uniformity in the etching process, and integrating the technology into existing manufacturing workflows.

Original Abstract Submitted

a method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an fgas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.