Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyu Man Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096879 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern, lower nanosheets, a separation layer, upper nanosheets, a gate electrode, and a first conductive layer. The lower nanosheets and upper nanosheets are stacked on the active pattern with a separation layer in between, and the gate electrode surrounds them. The first conductive layer is positioned between the gate electrode and the top and bottom surfaces of the upper nanosheets, but not between the gate electrode and the sidewalls of the upper nanosheets.
- Active pattern extending in a first horizontal direction
- Lower nanosheets stacked on the active pattern with a separation layer in between
- Upper nanosheets stacked on the separation layer
- Gate electrode surrounding the lower and upper nanosheets
- First conductive layer between the gate electrode and the top and bottom surfaces of the upper nanosheets
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, communication systems, and sensor technologies.
Problems Solved
This innovation addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the design and layout of nanosheets and conductive layers.
Benefits
The benefits of this technology include enhanced device performance, increased energy efficiency, and potential cost savings in semiconductor manufacturing processes.
Potential Commercial Applications
The potential commercial applications of this technology include the production of next-generation integrated circuits, advanced sensors, and high-speed communication devices.
Possible Prior Art
One possible prior art in this field is the use of nanosheet technology in semiconductor devices to improve transistor performance and energy efficiency. Researchers have been exploring various configurations and materials to enhance device characteristics.
What are the specific materials used in the fabrication of the nanosheets and conductive layers in this semiconductor device?
The specific materials used in the fabrication of the nanosheets and conductive layers are not mentioned in the abstract. Further details on the materials and their properties would be necessary to fully understand the technology.
How does the design of this semiconductor device contribute to reducing power consumption in electronic devices?
The abstract does not provide specific information on how the design of this semiconductor device contributes to reducing power consumption. A detailed analysis of the device's operational characteristics and efficiency metrics would be required to address this question accurately.
Original Abstract Submitted
a semiconductor device is provided. the semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. the first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.
