Taiwan semiconductor manufacturing company, ltd. (20240105805). SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Sheng Liang of PuyanTownship (TW)
Hong-Chih Chen of Changhua County (TW)
Shih-Hsun Chang of Hsinchu (TW)
Chih-Hao Chang of Hsin-chu (TW)
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105805 titled 'SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes vertically stacked channel structures over a substrate, source/drain structures laterally attached to the channel structures, a dielectric wall structure laterally attached to the channel structures, an isolation feature overlapping the dielectric wall structure, and a gate structure surrounding the channel structures.
- Channel structures vertically stacked over a substrate
- Source/drain structures laterally attached to the channel structures
- Dielectric wall structure laterally attached to the channel structures
- Isolation feature overlapping the dielectric wall structure
- Gate structure surrounding the channel structures
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for use in electronics and computing.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a more compact and integrated structure with enhanced functionality.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and improved reliability of semiconductor devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of next-generation electronic devices with improved performance and functionality.
Possible Prior Art
One possible prior art for this technology could be the use of similar vertical stacking and lateral attachment structures in semiconductor manufacturing processes.
What materials are used in the fabrication of the semiconductor structure?
The materials used in the fabrication of the semiconductor structure include silicon for the substrate, various dopants for the channel and source/drain structures, dielectric materials for the wall structure, and metal or polysilicon for the gate structure.
How does the isolation feature contribute to the overall performance of the semiconductor structure?
The isolation feature helps in reducing interference between different components of the semiconductor structure, improving the overall efficiency and reliability of the device.
Original Abstract Submitted
semiconductor structures and methods for manufacturing the same are provided. the semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. the semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. the second direction is different from the first direction. in addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. the semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.
