Taiwan semiconductor manufacturing company, ltd. (20240136228). Ion Implantation For Nano-FET simplified abstract
Contents
- 1 Ion Implantation For Nano-FET
Ion Implantation For Nano-FET
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Feng Nieh of Hsinchu (TW)
Ion Implantation For Nano-FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136228 titled 'Ion Implantation For Nano-FET
Simplified Explanation
The abstract of the patent application describes a nanofet transistor with doped channel junctions at either end of a channel region, formed through an iterative recessing and implanting process. The lateral straggling of the doped channel junctions can be controlled to achieve desired characteristics.
- The nanofet transistor includes doped channel junctions at the ends of a channel region.
- The doped channel junctions are formed through an iterative recessing and implanting process.
- The lateral straggling of the doped channel junctions can be controlled for desired characteristics.
Potential Applications
The technology could be applied in:
- Nanoelectronics
- Semiconductor industry
- Integrated circuits
Problems Solved
This technology solves issues related to:
- Controlling the characteristics of doped channel junctions
- Improving transistor performance
- Enhancing device reliability
Benefits
The benefits of this technology include:
- Improved transistor efficiency
- Enhanced control over device characteristics
- Increased reliability of nanofet transistors
Potential Commercial Applications
The technology could find commercial applications in:
- Semiconductor manufacturing
- Electronics industry
- Research and development
Possible Prior Art
One possible prior art could be the use of similar processes in semiconductor device fabrication.
What is the manufacturing cost of implementing this technology?
The manufacturing cost of implementing this technology would depend on various factors such as the scale of production, materials used, and equipment required. Companies would need to conduct cost-benefit analyses to determine the feasibility of integrating this technology into their manufacturing processes.
How does this technology compare to existing transistor technologies in terms of performance?
This technology offers improved control over the characteristics of doped channel junctions, potentially leading to enhanced transistor performance. Compared to existing transistor technologies, this innovation could provide better efficiency and reliability in nanofet transistors.
Original Abstract Submitted
a nanofet transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanofet transistor. the channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. the implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.
