Taiwan semiconductor manufacturing company, ltd. (20240105719). INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES simplified abstract
Contents
- 1 INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Cheng Ching of Hsinchu County (TW)
Huan-Chieh Su of Changhua County (TW)
Zhi-Chang Lin of Hsinchu County (TW)
Chih-Hao Wang of Hsinchu County (TW)
INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105719 titled 'INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES
Simplified Explanation
The abstract describes an integrated circuit with FinFET devices and a method for forming the integrated circuit. It includes a substrate, a fin extending from the substrate, a gate on one side of the fin, and a gate spacer alongside the gate. The gate spacer has two portions, one extending along the gate with a certain width, and the other extending above the gate with a greater width. In some examples, the second portion of the gate spacer includes a gate spacer layer on the gate.
- Integrated circuit with FinFET devices
- Method for forming the integrated circuit
- Substrate with a fin extending from it
- Gate on one side of the fin
- Gate spacer alongside the gate
- Gate spacer with two portions of different widths
- Second portion of the gate spacer includes a gate spacer layer
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of advanced integrated circuits with improved performance and efficiency.
Problems Solved
This technology addresses the need for more efficient and high-performance integrated circuits by utilizing FinFET devices and a unique gate spacer design.
Benefits
The benefits of this technology include enhanced circuit performance, increased efficiency, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
The technology could be utilized in various commercial applications such as smartphones, computers, IoT devices, and other electronic systems requiring high-performance integrated circuits.
Possible Prior Art
One possible prior art could be the use of traditional gate spacer designs in integrated circuits before the introduction of FinFET devices.
Unanswered Questions
How does this technology compare to existing FinFET designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing FinFET designs. Further research or testing may be needed to determine the specific advantages of this innovation.
Are there any limitations or drawbacks to implementing this technology in practical applications?
The article does not mention any potential limitations or drawbacks of implementing this technology. Additional studies or real-world applications may reveal any challenges that could arise.
Original Abstract Submitted
examples of an integrated circuit with finfet devices and a method for forming the integrated circuit are provided herein. in some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. the gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. in some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.
