US Patent Application 18358708. Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same simplified abstract
Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-Lun Min of Hsinchu City (TW)
Xusheng Wu of Hsinchu City (TW)
Chang-Miao Liu of Hsinchu City (TW)
Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358708 titled 'Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same
Simplified Explanation
The patent application describes a semiconductor device and its manufacturing method.
- The device includes two semiconductor fins formed over a substrate, with an isolation structure separating their lower portions.
- Each semiconductor fin has a gate stack formed over it.
- A separation feature, consisting of two dielectric layers with an air gap in between, separates the gate stacks.
- The bottom portion of the separation feature is inserted into the isolation structure.
Original Abstract Submitted
Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a first semiconductor fin and a second semiconductor fin formed over a substrate, wherein lower portions of the first semiconductor fin and the second semiconductor fin are separated by an isolation structure; a first gate stack formed over the first semiconductor fin and a second gate stack formed over the second semiconductor fin; and a separation feature separating the first gate stack and the second gate stack, wherein the separation feature includes a first dielectric layer and a second dielectric layer with an air gap defined therebetween, and a bottom portion of the separation feature being inserted into the isolation structure.
