Taiwan semiconductor manufacturing co., ltd. (20240096897). TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Po-Kang Ho of Taoyuan City (TW)
Tsai-Yu Huang of Taoyuan City (TW)
Huicheng Chang of Tainan City (TW)
TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096897 titled 'TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a device with a unique semiconductor fin structure for improved performance and efficiency.
- The device includes a first semiconductor fin and a second semiconductor fin extending from a substrate, with a hybrid fin over the substrate.
- The second semiconductor fin is positioned between the first semiconductor fin and the hybrid fin.
- Isolation regions are present between the semiconductor fins and the hybrid fin, with the second isolation region located further from the substrate than the first isolation region.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance transistors for electronics and communication systems.
Problems Solved
This innovation addresses the challenge of optimizing semiconductor fin structures to enhance device performance and efficiency.
Benefits
The device's unique fin structure can lead to improved speed, power consumption, and overall functionality of semiconductor devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for manufacturing next-generation electronic devices with enhanced performance capabilities.
Possible Prior Art
One possible prior art in this field could be the development of traditional semiconductor fin structures for transistor devices.
Unanswered Questions
How does this technology compare to existing semiconductor fin structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor fin structures to evaluate the performance and efficiency improvements offered by the described technology.
What specific manufacturing processes are required to implement this unique semiconductor fin structure?
The article does not delve into the specific manufacturing processes needed to produce the device with the described semiconductor fin configuration.
Original Abstract Submitted
in an embodiment, a device includes: a first semiconductor fin extending from a substrate; a second semiconductor fin extending from the substrate; a hybrid fin over the substrate, the second semiconductor fin disposed between the first semiconductor fin and the hybrid fin; a first isolation region between the first semiconductor fin and the second semiconductor fin; and a second isolation region between the second semiconductor fin and the hybrid fin, a top surface of the second isolation region disposed further from the substrate than a top surface of the first isolation region.
