Taiwan semiconductor manufacturing co., ltd. (20240096643). SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Alexander Kalnitsky of San Francisco CA (US)
Wei-Cheng Wu of Hsinchu County (TW)
Harry-Hak-Lay Chuang of Zhubei City (TW)
SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096643 titled 'SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, first and second wells, metal and poly gates, and source and drain regions. The metal gate partially covers the first well, while the poly gate covers the second well with a specific width ratio.
- The semiconductor device includes a substrate, first and second wells, metal and poly gates, and source and drain regions.
- The metal gate partially covers the first well, while the poly gate covers the second well with a specific width ratio of 0.1 to 0.2.
- The source and drain regions are located within the first and second wells, respectively.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps in:
- Enhancing semiconductor device performance
- Improving efficiency in electronic devices
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased speed and reliability of semiconductor devices
- Enhanced functionality of integrated circuits
- Lower energy consumption in electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Mobile devices
- Computer hardware
- Automotive electronics
Possible Prior Art
One possible prior art related to this technology could be:
- Previous patents on semiconductor device structures and manufacturing processes
What are the specific dimensions of the metal gate and poly gate in this semiconductor device?
The specific dimensions of the metal gate and poly gate are not provided in the abstract.
How does the width ratio of the poly gate to the metal gate impact the performance of the semiconductor device?
The impact of the width ratio on the performance of the semiconductor device is not discussed in the abstract.
Original Abstract Submitted
a semiconductor device includes a substrate, a first well, a second well, a metal gate, a poly gate, a source region, and a drain region. the first well and the second well are within the substrate. the metal gate is partially over the first well. the poly gate is over the second well. the poly gate is separated from the metal gate, and a width ratio of the poly gate to the metal gate is in a range from about 0.1 to about 0.2. the source region and the drain region are respectively within the first well and the second well.
