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Category:H01L29/423
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Pages in category "H01L29/423"
The following 200 pages are in this category, out of 864 total.
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- 18516521. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18516971. SEMICONDUCTOR PACKAGES AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517276. CELL STRUCTURE HAVING DIFFERENT POLY EXTENSION LENGTHS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518131. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518566. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18518585. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518735. CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 18519805. SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18520214. SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520730. SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521931. METAL SOURCE/DRAIN FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521975. SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522980. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18523023. ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
- 18524242. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524259. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18524646. MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18525988. HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526445. SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526839. Multi-Gate Device And Related Methods simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)
- 18530113. SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18530404. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18532619. Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18535274. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18538575. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 18543784. CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18545180. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
2
- 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 20240021615. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240032286. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240038841. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240038863. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240038872. GATE PROFILE TUNING FOR MULTIGATE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 20240038873. SEMICONDUCTOR DEVICES INCLUDING GATE SPACER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240047339. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240055509. NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
A
B
- Blockchain patent applications on 22nd Mar 2024
- Blockchain patent applications on April 11th, 2024
- Blockchain patent applications on April 4th, 2024
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 22nd, 2024
- Blockchain patent applications on February 29th, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on January 25th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 21st, 2024
- Blockchain patent applications on March 28th, 2024
- Blockchain patent applications on March 7th, 2024
- Blockchain patent applications on May 16th, 2024
H
I
- Intel corporation (20240105452). GATE CUTS WITH SELF-FORMING POLYMER LAYER simplified abstract
- Intel corporation (20240105453). HIGH ASPECT RATIO METAL GATE CUTS simplified abstract
- Intel corporation (20240105599). MUSHROOMED VIA STRUCTURES FOR TRENCH CONTACT OR GATE CONTACT simplified abstract
- Intel corporation (20240105774). INTEGRATED CIRCUIT STRUCTURES WITH UNIFORM EPITAXIAL SOURCE OR DRAIN CUT simplified abstract
- Intel corporation (20240105801). INTEGRATED CIRCUIT STRUCTURES WITH GATE VOLUME REDUCTION simplified abstract
- Intel corporation (20240105802). INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUGREMOVED FROM TRENCH CONTACT simplified abstract
- Intel corporation (20240105804). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105852). TOP-GATE DOPED THIN FILM TRANSISTOR simplified abstract
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240113101). CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract
- Intel corporation (20240113105). FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113108). WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113128). HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS simplified abstract
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240113194). SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
- Intel corporation (20240128269). VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS simplified abstract
- Intel corporation (20240178227). FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on May 30th, 2024
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240096948). STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract
- International business machines corporation (20240096949). DIODES IN NANOSHEET TECHNOLOGY simplified abstract
- International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
- International business machines corporation (20240105613). DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC simplified abstract
- International business machines corporation (20240105614). TRANSISTORS WITH ENHANCED VIA-TO-BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240113192). FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract
- International business machines corporation (20240113193). BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract
- International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract
- International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240136253). ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS simplified abstract
- International business machines corporation (20240136287). Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract
- International business machines corporation (20240136414). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
- International business machines corporation (20240162118). BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract
- International business machines corporation (20240162319). SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET simplified abstract
- International business machines corporation (20240178072). NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract
- International business machines corporation (20240178136). LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract
- International business machines corporation (20240178142). LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract
- International business machines corporation (20240178143). BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract
- International business machines corporation (20240178156). SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract
- International business machines corporation (20240178284). SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract
- International business machines corporation (20240178292). SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- International Business Machines Corporation patent applications on April 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 1st, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 16th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 30th, 2024
K
- Kabushiki kaisha toshiba (20240097012). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240097022). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract
- Kabushiki kaisha toshiba (20240097023). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
M
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- Mitsubishi electric corporation (20240136439). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Mitsubishi Electric Corporation patent applications on April 25th, 2024
Q
S
- Samsung Display Co., LTD. patent applications on February 29th, 2024
- SAMSUNG DISPLAY CO., LTD. patent applications on January 25th, 2024
- Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096889). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240096953). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096954). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240096955). INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240096960). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096980). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096984). INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240096991). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096995). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240105615). FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract
- Samsung electronics co., ltd. (20240105717). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105724). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105773). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240105789). SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240105790). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105791). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240113110). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240113160). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240113163). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240113182). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240113184). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240113185). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120278). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120279). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120378). SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240120392). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120393). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120400). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120401). SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES simplified abstract
- Samsung electronics co., ltd. (20240120421). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240128159). INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVING A PATTERN AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240128161). INTEGRATED CIRCUIT DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128264). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128268). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128319). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240128332). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128335). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128347). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136356). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136398). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136416). SEMICONDUCTOR DEVICE simplified abstract