18518585. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Georgios Vellianitis of Heverlee (BE)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518585 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a semiconductor device with a unique structure and a method for manufacturing it. The device includes a gate structure and source and drain terminals within an insulating dielectric layer. The source and drain terminals are positioned at opposite ends of the gate structure, with a channel region sandwiched between the gate structure and the terminals.
- Gate structure and source/drain terminals located in insulating dielectric layer
- Source and drain terminals positioned at opposite ends of gate structure
- Channel region surrounds gate structure and extends between source and drain terminals
Potential Applications
- Semiconductor industry for advanced electronic devices
- Integrated circuits for various electronic applications
Problems Solved
- Improved performance and efficiency of semiconductor devices
- Enhanced functionality and miniaturization of electronic components
Benefits
- Higher speed and lower power consumption in electronic devices
- Increased reliability and durability of semiconductor components
Original Abstract Submitted
A semiconductor device and a manufacturing method thereof are provided. The gate structure and the source and drain terminals are located in the insulating dielectric layer, and the source and drain terminals are located respectively at both opposite ends of the gate structure. The channel region is sandwiched between the gate structure and the source and drain terminals and surrounds the gate structure. The channel region extends between the source and drain terminals.
