Samsung electronics co., ltd. (20240105790). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105790 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the abstract includes a substrate with active areas, a bit line, a contact structure, a word line, landing pads, and a capacitor structure, all buried under the substrate's surface.
- The device includes a substrate with active areas, a bit line, a contact structure, a word line, landing pads, and a capacitor structure.
- The bit line and word line are buried under the substrate's surface.
Potential Applications
This technology could be applied in:
- Memory devices
- Microprocessors
- Integrated circuits
Problems Solved
This technology helps in:
- Increasing circuit density
- Improving signal integrity
- Enhancing overall performance
Benefits
The benefits of this technology include:
- Higher integration levels
- Improved reliability
- Enhanced functionality
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Previous integrated circuit designs with buried bit lines and word lines
Unanswered Questions
How does this technology impact power consumption in electronic devices?
This article does not address the specific impact of this technology on power consumption in electronic devices.
What are the potential challenges in manufacturing this type of integrated circuit device?
The article does not discuss the potential challenges that may arise during the manufacturing process of this integrated circuit device.
Original Abstract Submitted
provided is an integrated circuit device including a substrate including a first active area and a second active area each extending in a first direction, a bit line extending in the first direction in a first trench of the substrate and arranged between the first active area and the second active area in a second direction perpendicular to the first direction, a contact structure including a lower contact contacting the bit line and an upper contact contacting the first active area, a word line extending in the second direction in a second trench of the substrate, a plurality of landing pads on the substrate, and a capacitor structure including a plurality of lower electrodes on the plurality of landing pads, wherein the bit line and the word line are buried under an upper surface of the substrate.
