Samsung electronics co., ltd. (20240120278). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing power distribution methods in semiconductor devices?
- 1.11 What are the potential challenges in implementing this technology in mass production?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120278 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with an active pattern, field insulating film, power rail, trench, and metal pattern. The trench has a convex shape and the field insulating film is disposed in the trench.
- Substrate with upper and lower surfaces
- Active pattern on upper surface extending in a first direction
- Field insulating film covering sidewall of active pattern
- Power rail on lower surface extending in the first direction
- Trench exposing a portion of the power rail
- Metal pattern filling at least a portion of the trench and connected to the power rail
- Bottom surface of the trench is coplanar with the lower surface of the substrate
- Sidewall of the trench has a convex shape
- Field insulating film is disposed in the trench
Potential Applications
The technology described in this patent application could be applied in the manufacturing of semiconductor devices for various electronic applications such as integrated circuits, power electronics, and sensors.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing efficient power distribution and isolation between different components on the substrate.
Benefits
The benefits of this technology include enhanced power management, reduced signal interference, improved device efficiency, and overall better performance of electronic systems.
Potential Commercial Applications
The potential commercial applications of this technology could be in the fields of consumer electronics, automotive electronics, industrial automation, and telecommunications. The optimized power distribution and isolation features make it suitable for a wide range of electronic devices and systems.
Possible Prior Art
One possible prior art for this technology could be related to similar semiconductor device structures with trench isolation and power rail connections. Previous patents or research papers on advanced packaging techniques for integrated circuits may also contain relevant information.
Unanswered Questions
How does this technology compare to existing power distribution methods in semiconductor devices?
This article does not provide a direct comparison with existing power distribution methods in semiconductor devices. It would be interesting to know the specific advantages and disadvantages of this technology compared to traditional power distribution techniques.
What are the potential challenges in implementing this technology in mass production?
The article does not address the potential challenges in implementing this technology in mass production. It would be important to understand any manufacturing difficulties, cost implications, or scalability issues that could arise when applying this technology on a larger scale.
Original Abstract Submitted
a semiconductor device includes: a substrate including an upper surface and a lower surface opposite to the upper surface; an active pattern disposed on the upper surface of the substrate and extending in a first direction; a field insulating film disposed on the upper surface of the substrate and covering a sidewall of the active pattern; a power rail disposed on the lower surface of the substrate and extending in the first direction; a trench formed in the substrate and exposing a portion of the power rail; and a metal pattern filling at least a portion of the trench and connected to the power rail, wherein a bottom surface of the trench is substantially coplanar with the lower surface of the substrate, wherein a sidewall of the trench has a convex shape, and wherein at least a portion of the field insulating film is disposed in the trench.
