Samsung electronics co., ltd. (20240096954). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Sang Yong Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096954 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern with a lower pattern and multiple sheet patterns, a gate structure with a gate electrode and a gate insulating film, and an interfacial insulating film with a first vertical portion and a horizontal portion. The first vertical portion has a greater dimension in one direction than the horizontal portion and contains a higher concentration of a first element in the first area contacting a source/drain pattern compared to the second area between the first area and the gate electrode.
- Active pattern with lower pattern and sheet patterns
- Gate structure with gate electrode and gate insulating film
- Interfacial insulating film with first vertical portion and horizontal portion
- Higher concentration of first element in first area compared to second area
Potential Applications
This technology could be used in the development of advanced semiconductor devices for various electronic applications such as mobile devices, computers, and sensors.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by enhancing the gate structure design and optimizing the interfacial insulating film composition.
Benefits
The benefits of this technology include increased device performance, reduced power consumption, and improved reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance integrated circuits and electronic components.
Possible Prior Art
One possible prior art could be the use of different materials in the gate insulating film to improve the performance of semiconductor devices. Another could be the optimization of the gate structure design to enhance device efficiency.
Unanswered Questions
How does this technology compare to existing gate structure designs in terms of performance and reliability?
This article does not provide a direct comparison with existing gate structure designs in terms of performance and reliability.
What are the specific electronic applications where this technology could have the most significant impact?
The article does not specify the specific electronic applications where this technology could have the most significant impact.
Original Abstract Submitted
a semiconductor device includes an active pattern including: a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction; a gate structure on the lower pattern and including a gate electrode and a gate insulating film including an interfacial insulating film including a first vertical portion and a horizontal portion. a dimension in a third direction of the first vertical portion is greater than a dimension in the second direction of the horizontal portion. the first vertical portion includes: a first area contacting a source/drain pattern; and a second area provided between the first area and the gate electrode. the interfacial insulating film includes a first element other than silicon, wherein a concentration of the first element in the first area is greater than a concentration of the first element in the second area.
