Samsung electronics co., ltd. (20240096889). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Seung Min Song of Halfmoon NY (US)
Seungchan Yun of Waterford NY (US)
Kang-ill Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096889 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract of the patent application describes an integrated circuit device with specific regions and components arranged in a particular configuration.
- The device includes a first upper channel region on a substrate.
- A first lower channel region is located between the substrate and the first upper channel region.
- A first intergate insulator separates the first lower channel region and the first upper channel region, consisting of a lower portion and an upper portion.
- An upper gate electrode is present, along with a lower gate electrode between the substrate and the upper gate electrode.
- The first upper channel region and the upper portion of the first intergate insulator are within the upper gate electrode.
- The first lower channel region and the lower portion of the first intergate insulator are within the lower gate electrode.
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- Potential Applications
The technology described in this patent application could be used in various electronic devices such as smartphones, tablets, and computers to improve performance and efficiency.
- Problems Solved
This technology helps in enhancing the functionality and speed of integrated circuits by optimizing the arrangement of channel regions and insulators within the device.
- Benefits
The benefits of this technology include increased processing power, reduced energy consumption, and improved overall performance of electronic devices utilizing these integrated circuits.
- Potential Commercial Applications
The innovative design of this integrated circuit device could be applied in the semiconductor industry for manufacturing advanced electronic components used in consumer electronics, automotive systems, and industrial machinery.
- Possible Prior Art
One possible prior art for this technology could be the development of similar integrated circuit devices with different configurations of channel regions and insulators to achieve specific performance goals.
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- Unanswered Questions
- How does this technology compare to existing integrated circuit designs in terms of efficiency and performance?
This article does not provide a direct comparison with existing integrated circuit designs to evaluate the efficiency and performance improvements offered by this technology.
- What are the potential challenges or limitations of implementing this technology on a large scale in commercial electronic devices?
The article does not address the potential challenges or limitations that may arise when scaling up the production and integration of this technology into commercial electronic devices.
Original Abstract Submitted
integrated circuit devices may include a first upper channel region on a substrate, a first lower channel region between the substrate and the first upper channel region, a first intergate insulator that is between the first lower channel region and the first upper channel region and includes a lower portion and an upper portion, an upper gate electrode, and a lower gate electrode between the substrate and the upper gate electrode. the first upper channel region and the upper portion of the first intergate insulator may be in the upper gate electrode. the first lower channel region and the lower portion of the first intergate insulator are in the lower gate electrode.
