Samsung electronics co., ltd. (20240096955). INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096955 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR
Simplified Explanation
The abstract describes an integrated circuit device with a fin-type active region, semiconductor patterns, gate electrode, and gate cut insulating pattern.
- The integrated circuit device includes a substrate with a fin-type active region extending in one direction.
- Semiconductor patterns are spaced apart from the upper surface of the fin-type active region and include a channel region, gate electrode, and gate cut insulating pattern.
- The gate electrode extends in a different direction on the fin-type active region and is positioned between the semiconductor patterns.
- The gate electrode has two sidewalls, with the gate cut insulating pattern on one of the sidewalls.
- The gate cut insulating pattern has a wider upper portion than lower portion and a curved sidewall.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuits by enhancing the control of electrical signals within the device.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and enhanced reliability of integrated circuit devices.
Potential Commercial Applications
One potential commercial application of this technology could be in the semiconductor industry for manufacturing high-performance processors and memory chips.
Possible Prior Art
One possible prior art for this technology could be the development of finFET transistors, which also involve fin-type active regions and gate electrodes with insulating patterns.
Unanswered Questions
How does this technology compare to existing integrated circuit designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing integrated circuit designs.
What are the specific manufacturing processes involved in producing this integrated circuit device?
The article does not delve into the specific manufacturing processes used to produce this integrated circuit device.
Original Abstract Submitted
in some embodiments, an integrated circuit device includes a substrate, a fin-type active region on the substrate that extends in a first direction, a plurality of semiconductor patterns spaced apart from an upper surface of the fin-type active region and include a channel region, a gate electrode, and a gate cut insulating pattern. the gate electrode extends in a second direction on the fin-type active region and is disposed between the plurality of semiconductor patterns. the gate electrode includes a first sidewall extending in the second direction and a second sidewall extending in the first direction. the gate cut insulating pattern is on a second sidewall of the gate electrode. an upper portion of the gate cut insulating pattern is wider in the second direction than a lower portion of the gate cut insulating pattern. a portion of a sidewall of the gate cut insulating pattern is curved.
