Samsung electronics co., ltd. (20240128268). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Krishna Kumar Bhuwalka of Suwon-si (KR)
Takeshi Okagaki of Hwaseong-si (KR)
Dong Won Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128268 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes channel layers on a substrate, gate electrode surrounding the channel layers, and a source/drain layer in contact with the channel layers. The source/drain layer protrudes further than the gate electrode, with specific distances between the gate electrode and the channel layers.
- Channel layers spaced apart on a substrate
- Gate electrode surrounding the channel layers
- Source/drain layer in contact with the channel layers
- Source/drain layer protruding further than the gate electrode
- Specific distances between the gate electrode and the channel layers
Potential Applications
The technology described in this patent application could be applied in the development of high-performance semiconductor devices, such as transistors, integrated circuits, and other electronic components.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the contact between the source/drain layer and the channel layers, reducing parasitic resistance, and enhancing overall device functionality.
Benefits
The benefits of this technology include increased device performance, improved energy efficiency, enhanced reliability, and potentially reduced manufacturing costs due to optimized design and functionality.
Potential Commercial Applications
Potential commercial applications of this technology could include the production of advanced electronic devices for various industries, including telecommunications, computing, automotive, and consumer electronics.
Possible Prior Art
One possible prior art related to this technology could be the development of semiconductor devices with optimized source/drain contact structures to improve device performance and efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by the described technology.
What are the specific manufacturing processes involved in implementing this technology in semiconductor device production?
The article does not delve into the specific manufacturing processes required to implement this technology in semiconductor device production, such as deposition techniques, lithography steps, or material selection.
Original Abstract Submitted
a semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.
