Samsung electronics co., ltd. (20240136416). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sung Hwan Kim of Suwon-si (KR)
Heung Seok Ryu of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136416 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure involving gate structures, source/drain patterns, silicide mask patterns, and contact silicide films. Here are some key points to explain the innovation:
- Active pattern with gate structures: The device features an active pattern extending in one direction with gate structures spaced along it, each containing a gate electrode.
- Source/drain patterns and silicide mask: Between the gate structures are source/drain patterns, with a silicide mask pattern on top. The upper surface of the silicide mask pattern is lower than the gate electrode's upper surface.
- Source/drain contact and contact silicide film: A source/drain contact is connected to the source/drain pattern, with a contact silicide film between them. The height difference between the lowermost part of the source/drain pattern and contact is smaller than the height to the bottom surface of the silicide mask pattern.
Potential Applications
The technology described in this patent application could be used in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This innovation addresses issues related to improving the performance and efficiency of semiconductor devices by optimizing the structure and materials used in their construction.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and potentially lower power consumption due to optimized design and materials.
Potential Commercial Applications
This technology could have commercial applications in the semiconductor industry for manufacturing advanced electronic devices with improved performance and efficiency.
Possible Prior Art
One possible prior art for this technology could be the use of silicide materials in semiconductor devices to improve conductivity and reduce resistance in contact areas.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this innovation.
What specific manufacturing processes are required to implement this technology in semiconductor device production?
The article does not detail the specific manufacturing processes needed to incorporate this technology into semiconductor device production, such as deposition methods or etching techniques.
Original Abstract Submitted
a semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.
