20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240030303 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The present invention is a semiconductor device that includes various components such as a gate electrode, source region, channel region, drain region, trenches, and a surface metal layer. The gate electrode is buried in a gate trench of a first conductivity-type semiconductor layer. The source region, channel region, and drain region are formed in the semiconductor layer. A second trench is selectively formed in a source portion of the semiconductor layer, containing the source region. The second trench has a buried portion. A second conductivity-type channel contact region is selectively disposed at a position higher than the bottom portion of the second trench in the source portion and is electrically connected to the channel region. The surface metal layer is disposed on the source portion and is electrically connected to the source region and the channel contact region.
- The semiconductor device includes a buried gate electrode and various regions formed in a semiconductor layer.
- A second trench is selectively formed in a source portion of the semiconductor layer, containing the source region.
- The device includes a buried portion in the second trench and a channel contact region connected to the channel region.
- A surface metal layer is present on the source portion and is connected to the source region and the channel contact region.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in power management circuits, memory devices, and microprocessors.
Problems solved by this technology:
- The buried gate electrode helps in reducing leakage current and improving device performance.
- The selective formation of the second trench allows for better control of the source region.
- The presence of the channel contact region improves the electrical connection and overall device efficiency.
Benefits of this technology:
- Improved device performance and efficiency due to reduced leakage current.
- Enhanced control over the source region, leading to better device functionality.
- Increased electrical connection reliability and overall device efficiency.
Original Abstract Submitted
a semiconductor device of the present invention includes a gate electrode buried in a gate trench of a first conductivity-type semiconductor layer, a first conductivity-type source region, a second conductivity-type channel region, and a first conductivity-type drain region formed in the semiconductor layer, a second trench selectively formed in a source portion defined in a manner containing the source region in the surface of the semiconductor layer, a trench buried portion buried in the second trench, a second conductivity-type channel contact region selectively disposed at a position higher than that of a bottom portion of the second trench in the source portion, and electrically connected with the channel region, and a surface metal layer disposed on the source portion, and electrically connected to the source region and the channel contact region.
