Samsung electronics co., ltd. (20240113184). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113184 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a barrier layer, a gate electrode, a gate semiconductor layer, and a source and drain on a channel layer. The barrier layer has a greater energy band gap than the channel layer, and the gate semiconductor layer has different surfaces with varying slopes.
- The barrier layer has a greater energy band gap than the channel layer.
- The gate semiconductor layer has different surfaces with varying slopes.
- The gate semiconductor layer has a first surface contacting the barrier layer and a second surface contacting the gate electrode, connected by a sidewall.
- The area of the second surface of the gate semiconductor layer may be narrower than the area of the first surface.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as in integrated circuits, sensors, and communication devices.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the control of electron flow and reducing leakage current, leading to better overall device performance.
Benefits
The benefits of this technology include increased speed, reduced power consumption, improved reliability, and enhanced functionality of semiconductor devices, contributing to advancements in electronic technology.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance electronic devices, leading to the development of faster and more energy-efficient products.
Possible Prior Art
One possible prior art related to this technology could be the use of different materials for barrier layers in semiconductor devices to improve their performance and efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to evaluate the performance and efficiency improvements offered by this technology.
What are the specific electronic applications where this technology could have the most significant impact?
The article does not specify the specific electronic applications where this technology could have the most significant impact, leaving room for further exploration and analysis in different industry sectors.
Original Abstract Submitted
a semiconductor device may include a barrier layer on a channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, and a source and a drain spaced apart from each other on the channel layer. the barrier layer may have a greater energy band gap than the channel layer. the gate semiconductor layer may include a first surface contacting the barrier layer and a second surface contacting the gate electrode, and a sidewall connecting the first surface with the second surface. an area of the second surface of the gate semiconductor layer may be narrower than an area of the first surface. the sidewall of the gate semiconductor layer may include a plurality of surfaces having different slopes.
