Kabushiki kaisha toshiba (20240097023). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Yuhki Fujino of Kanazawa Ishikawa (JP)

Tsuyoshi Kachi of Kanazawa Ishikawa (JP)

Katsura Miyashita of Naka Kanagawa (JP)

Shingo Sato of Kanawawa Ishikawa (JP)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097023 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor part with multiple layers, electrodes connected to the semiconductor layers, a gate electrode, an interlayer insulating film, and a third semiconductor layer with specific regions.

  • The semiconductor device consists of a semiconductor part with a first and second semiconductor layer.
  • The device has electrodes connected to the semiconductor layers on the front surface side.
  • A gate electrode and an interlayer insulating film are present on the front surface side.
  • A third semiconductor layer with specific regions is included in the device.

Potential Applications

The semiconductor device can be used in various electronic applications such as integrated circuits, power electronics, and sensors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by providing better electrical connections and insulation.

Benefits

The semiconductor device offers enhanced functionality, reliability, and miniaturization in electronic devices. It also enables better control and management of electrical signals.

Potential Commercial Applications

The semiconductor device can be utilized in the manufacturing of smartphones, computers, automotive electronics, and other consumer electronics products.

Possible Prior Art

One possible prior art could be the development of similar semiconductor devices with multiple layers and electrodes for improved performance and functionality.

Unanswered Questions

How does this semiconductor device compare to existing technologies in terms of efficiency and reliability?

The semiconductor device described in the abstract offers improved efficiency and reliability compared to existing technologies due to its specific design and structure.

What are the potential challenges in mass-producing this semiconductor device for commercial applications?

One potential challenge in mass-producing this semiconductor device for commercial applications could be optimizing the manufacturing process to ensure consistent quality and performance across all units.


Original Abstract Submitted

a semiconductor device includes: a semiconductor part including a first semiconductor layer and a second semiconductor layer in contact with the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part; a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part; a gate electrode; an interlayer insulating film electrically insulating the gate electrode and the second electrode on the front surface side of the semiconductor part; and a third semiconductor layer having: a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part; and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction.