18524259. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Junichi Koezuka of Tochigi (JP)
Yukinori Shima of Tatebayashi (JP)
Suzunosuke Hiraishi of Tochigi (JP)
Kenichi Okazaki of Tochigi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524259 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor device with an oxide semiconductor film to reduce defects and improve electrical characteristics and reliability.
- Forming a gate electrode and gate insulating film over a substrate
- Forming an oxide semiconductor film over the gate insulating film
- Forming a pair of electrodes over the oxide semiconductor film
- Forming a first oxide insulating film over the oxide semiconductor film and electrodes using plasma CVD method
- Forming a second oxide insulating film over the first oxide insulating film
- Performing heat treatment at a specific temperature range
Potential Applications
The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as transistors, sensors, and displays.
Problems Solved
This technology addresses the issue of defects in oxide semiconductor films in semiconductor devices, leading to improved electrical characteristics and reliability.
Benefits
The method outlined in the patent application can enhance the performance and longevity of semiconductor devices by reducing defects in oxide semiconductor films.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of high-performance and reliable electronic devices.
Possible Prior Art
Prior art in the field of semiconductor device manufacturing may include methods for improving the quality of oxide semiconductor films, but the specific combination of steps outlined in this patent application may be novel.
Unanswered Questions
What specific types of defects are targeted by this method?
The patent application mentions reducing defects in oxide semiconductor films, but it does not specify the nature or origin of these defects.
How does the heat treatment process contribute to defect reduction?
While the application mentions heat treatment as a step in the manufacturing process, it does not elaborate on the mechanism by which this process helps in reducing defects in the oxide semiconductor film.
Original Abstract Submitted
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.
