Kabushiki kaisha toshiba (20240097022). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Kentaro Ichinoseki of Higashimurayama Tokyo (JP)

Keiko Kawamura of Yokohama Kanagawa (JP)

Tatsuya Nishiwaki of Yokohama Kanagawa (JP)

Kohei Oasa of Setagaya Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097022 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor part with first to third electrodes, where the first electrode is on the back surface, the second electrode is on the front surface, and the third electrode is between them. The control electrode has first and second portions, with the first portion facing the insulating space via the third electrode and the second portion extending between the insulating space and the second electrode.

• The semiconductor device has a unique electrode configuration with the control electrode having two portions linked together, providing precise control over the device.
• The third electrode is electrically insulated from the semiconductor part, allowing for efficient operation and preventing interference.

Potential Applications

This technology could be applied in:

• Power electronics
• Semiconductor devices
• Integrated circuits

Problems Solved

This technology solves issues related to:

• Precise control of semiconductor devices
• Efficient operation and prevention of interference

Benefits

The benefits of this technology include:

• Improved performance of semiconductor devices
• Enhanced control over device operation
• Increased efficiency in electronic systems

Potential Commercial Applications

This technology could be commercially applied in:

• Electronics manufacturing
• Semiconductor industry
• Power management systems

Possible Prior Art

One possible prior art for this technology could be:

• Semiconductor devices with similar electrode configurations

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of efficiency and performance?

This article does not provide a direct comparison with existing semiconductor devices, so it is unclear how this technology stacks up against current solutions.

What are the specific manufacturing processes involved in creating this semiconductor device?

The article does not delve into the specific manufacturing processes used to create this semiconductor device, leaving a gap in understanding the production methods involved.

Original Abstract Submitted

a semiconductor device includes a semiconductor part, first to third and control electrodes. the first electrode is provided on a back surface of the semiconductor part; and the second electrode is provided on a front surface thereof. the third electrode is provided between the first and second electrodes. the third electrode extends into the semiconductor part from the front surface side thereof. the third electrode is electrically insulated from the semiconductor part via an insulating space between the semiconductor part and the third electrode. the control electrode includes first and second portions. the first portion is linked to the second portion and extends between the semiconductor part and the third electrode. the second portion is provided between the second electrode and the third electrode. the first portion faces the insulating space via the third electrode; and the second portion extends between the insulating space and the second electrode.