International business machines corporation (20240113192). FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract

FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL

Organization Name

international business machines corporation

Inventor(s)

Shogo Mochizuki of Mechanicville NY (US)

Andrew M. Greene of Slingerlands NY (US)

Gen Tsutsui of Glenmont NY (US)

FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113192 titled 'FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL

Simplified Explanation

The semiconductor structure disclosed in the patent application aims to improve the switching speed of a first transistor by incorporating a first nanosheet channel with specific features such as a gate section with silicon-germanium (SiGe) surrounded by a metal gate and a junction section comprising silicon surrounded by a spacer.

• The first transistor includes a first source/drain (S/D), a metal gate, a spacer, and a first nanosheet channel.
• The first nanosheet channel consists of a gate section with silicon-germanium (SiGe) surrounded by the metal gate and a junction section comprising silicon surrounded by the spacer.

Potential Applications

The technology can be applied in:

• High-speed electronic devices
• Power management systems
• Communication systems

Problems Solved

The technology addresses issues related to:

• Slow switching speeds in transistors
• Inefficient power consumption
• Limited performance in electronic devices

Benefits

The benefits of this technology include:

• Improved switching speed
• Enhanced performance of electronic devices
• Reduced power consumption

Potential Commercial Applications

The technology can be utilized in:

• Semiconductor manufacturing companies
• Electronics industry
• Telecommunications sector

Possible Prior Art

One possible prior art could be the use of nanosheet channels in semiconductor structures to enhance transistor performance.

How does the technology impact the overall efficiency of electronic devices?

The technology can potentially improve the efficiency of electronic devices by reducing power consumption and enhancing performance.

What are the specific challenges in implementing this technology on a large scale?

Some challenges in implementing this technology on a large scale may include manufacturing complexities, cost considerations, and integration with existing semiconductor processes.

Original Abstract Submitted

embodiments herein include semiconductor structures that may include a semiconductor structure for improving the switching speed of a first transistor is disclosed. the first transistor may include a first source/drain (s/d), a metal gate, a spacer between the first s/d and the metal gate, and a first nanosheet channel. the first nanosheet channel may include: a gate section with silicon-germanium (sige) surrounded by the metal gate; and a junction section comprising silicon surrounded by the spacer.